On the apparent mobility in nanometric n-MOSFETsZILLI, M; PALESTRI, P; SELMI, L et al.IEEE electron device letters. 2007, Vol 28, Num 11, pp 1036-1039, issn 0741-3106, 4 p.Article

Comparison of modeling approaches for the capacitance-voltage and current-voltage characteristics of advanced gate stacksPALESTRI, P; BARIN, N; IANNACCONE, G et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 1, pp 106-114, issn 0018-9383, 9 p.Article

A monte-carlo study of the role of scattering in deca-nanometer MOSFETsPALESTRI, P; ESSENI, D; EMINENTE, S et al.International Electron Devices Meeting. 2004, pp 605-608, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Investigation on convergence and stability of self-consistent Monte Carlo device simulationsCLERC, R; PALESTRI, P; ABRAMO, A et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 191-194, isbn 88-900847-8-2, 4 p.Conference Paper

Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III―V channel materialsREVELANT, A; PALESTRI, P; OSGNACH, P et al.Solid-state electronics. 2013, Vol 88, pp 54-60, issn 0038-1101, 7 p.Article

An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulationsPALESTRI, P; LUCCI, L; DEI TOS, S et al.Semiconductor science and technology. 2010, Vol 25, Num 5, issn 0268-1242, 055011.1-055011.10Article

Electromechanical Piezoresistive Sensing in Suspended Graphene MembranesSMITH, A. D; NIKLAUS, F; ÖSTLING, M et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3237-3242, issn 1530-6984, 6 p.Article

Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo studyCONZATTI, F; DE MICHIELIS, M; ESSENI, D et al.Solid-state electronics. 2009, Vol 53, Num 7, pp 706-711, issn 0038-1101, 6 p.Conference Paper

Monte-Carlo simulation of MOSFETs with band offsets in the source and drain : Ultimate integration on silicon conference 2007BRACCIOLI, M; PALESTRI, P; MOUIS, M et al.Solid-state electronics. 2008, Vol 52, Num 4, pp 506-513, issn 0038-1101, 8 p.Article

Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap : A monte carlo studyEMINENTE, S; ESSENI, D; PALESTRI, P et al.International Electron Devices Meeting. 2004, pp 609-612, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensorsPITTINO, F; PALESTRI, P; SCARBOLO, P et al.Solid-state electronics. 2014, Vol 98, pp 63-69, issn 0038-1101, 7 p.Article

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport modelBRESCIANI, M; PALESTRI, P; ESSENI, D et al.Solid-state electronics. 2013, Vol 89, pp 161-166, issn 0038-1101, 6 p.Article

Modeling, simulation and design of the vertical Graphene Base TransistorDRIUSSI, F; PALESTRI, P; SELMI, L et al.Microelectronic engineering. 2013, Vol 109, pp 338-341, issn 0167-9317, 4 p.Article

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETsPALESTRI, P; ALEXANDER, C; ESSENI, D et al.Solid-state electronics. 2009, Vol 53, Num 12, pp 1293-1302, issn 0038-1101, 10 p.Article

An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulationPALESTRI, P; EMINENTE, S; ESSENI, D et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 727-732, issn 0038-1101, 6 p.Article